| PART |
Description |
Maker |
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| IRHY597230CM IRHY593230CM IRHY59230CM IRHY597230CM |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
8 A, 200 V, 0.515 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
Simple Drive Requirements
|
IRF[International Rectifier]
|
| IRHN7250 JANSR2N7269U JANSF2N7269U JANSG2N7269U |
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| JANSF2N7423 IRHM93250 IRHM9250 JANSR2N7423 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) 抗辐射功率MOSFET的通孔T0 254AA
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRH7250SE IRH7250SE-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package
|
IRF[International Rectifier]
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQA32N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FQPF19N20C FQP19N20C FQP19N20CTSTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA19N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
